日志
100G 高速PIN 探测器
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Features
• High frequency operation
• Low polarisation sensitivity
• High speed 1mm ’W’ connector electrical interface
• Available packaged or bare chip
Applications
• mm-wave radio over fibre
• Instrumentation / test and measurement
• High speed clock recovery
• Broadband package for 100 Gbit/s under development
Description
The 100G-HS-PD is a high speed photodiode designed for W band operation. It comes in a fibre pigtailed module with a 1mm ‘W’ connector electrical interface. There is no internal load resistor in the module, which enables the output mm-wave power to be maximised. The module is suitable for use with an external bias T. The edge coupled PiN photodiode design gives a good trade-off between high frequency operation and high responsivity, providing a useful device for laboratory applications. The chip capacitance is ~ 30 fF at –2V giving a predicted 1/(2πRC) bandwidth > 100 GHz in the absence of package parasitics and carrier life-time effects.
• High frequency operation
• Low polarisation sensitivity
• High speed 1mm ’W’ connector electrical interface
• Available packaged or bare chip
Applications
• mm-wave radio over fibre
• Instrumentation / test and measurement
• High speed clock recovery
• Broadband package for 100 Gbit/s under development
Description
The 100G-HS-PD is a high speed photodiode designed for W band operation. It comes in a fibre pigtailed module with a 1mm ‘W’ connector electrical interface. There is no internal load resistor in the module, which enables the output mm-wave power to be maximised. The module is suitable for use with an external bias T. The edge coupled PiN photodiode design gives a good trade-off between high frequency operation and high responsivity, providing a useful device for laboratory applications. The chip capacitance is ~ 30 fF at –2V giving a predicted 1/(2πRC) bandwidth > 100 GHz in the absence of package parasitics and carrier life-time effects.
